MJE13005A NPN Power Transistor
TIP122 – 100V ,5A Darlington NPN Transistor
Specification
- Collector-Emitter-voltage B open VCE0: 100 V
- Collector-Base-voltage E open VCB0: 100 V
- Emitter-Base-voltage C open VEB0: 5 V
- Collector current IC: 5 A
- Peak Collector current ICM: 8 A
- Base current (dc) IB: 120 mA
- Junction temperature Tj?: - 65 + 150?C
- Storage temperature TS: - 65 + 150?C
- Recommended complementary PNP transistors TIP125, TIP126, TIP127
2N6517 Bipolar PNP Transistor
Specification
- Type:NPN
- Collector-Emitter Voltage:350V
- Collector-Base Voltage:350V
- Emitter-Base Voltage:6V
- Collector Current:0.5A
- Collector Dissipation:0.625W
- DC Current Gain (hfe):20to200
- Transition Frequency:40MHz
- Operating and Storage Junction Temperature Range:-55 to +150C
- Package:TO-92
Mosfet 10n65 , DIP
2N3055 NPN Power Transistor TO-3 Metal Package
MUR1660 600V 16A Ultrafast Power Diode
The MUR1660CT 16A, 600V Ultra fast Diodes have a low forward voltage drop and are of planar, silicon nitride passivated, ion-implanted, epitaxial construction. These devices are intended for use as energy steering/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and ultra fast recovery with soft recovery characteristics minimizes ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistor. These state-of-the-art devices are a series designed for use in switching power supplies, inverters and as free wheeling diodes. The MUR1660CT is designed for use in switching power supplies, inverters and as free wheeling diodes, these state?of?the?art devices have the following features:
? Ultra fast 35 and 60 Nanosecond Recovery Times
? 175?C Operating Junction Temperature
? Popular TO?220 Package
? Epoxy Meets UL94, VO @ 1/8?
? High Temperature Glass Passivated Junction
? High Voltage Capability to 600 Volts
? Low Leakage Specified @ 150?C Case Temperature
? Current Derating @ Both Case and Ambient Temperatures
??Low power loss
??High efficiency Low forward voltage
??Super fast recovery times
Mechanical Characteristics:-
? Case: Epoxy, Molded
? Weight: 1.9 grams (approximately)
? Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
? Lead Temperature for Soldering Purposes: 260?C Max. for 10 Seconds
? Shipped 50 units per plastic tube
? Marking: U1610, U1615, U1620, U1640, U1660
D44H11: Power Bipolar Transistor, NPN, 10 A, 80 V
C2073 NPN Power Transistor
C4793 NPN 1A 230V Power Amplifier transistor
- Transistor Silicon NPN Epitaxial Type 2SC4793 Power Amplifier Applications Driver Stage Amplifier Applications 2SC4793 Unit: mm
- High transition frequency: fT = 100 MHz (typ.)
- Com plementary to 2SA1837 Absolute Maximum Ratings (Tc = 25C) Characteristics Symbol Rating Unit Collector-base v oltage Collector-emitter voltage Emit ter-base voltage Collector current Ba se current Collector power dissipation Ta = 25C Tc = 25C VCBO VCEO VEBO IC IB PC 230 V 230 V 5V 1A 0. 1 A 2. 0 W 20 JEDEC Junction temperature Storage temperature range Tj 150 C Tstg 55 to 150 C JE
BYQ28E-200, 200V , 10A Power Transistors
Dual ultrafast power diodes SOT78 (TO-220AB) plastic package. These diodes are rugged with a guaranteed electrostatic discharge voltage capability.
Fast switching Guaranteed ESD capability High thermal cycling performance Low on-state losses Low thermal resistance Soft recovery minimizes power-consuming oscillations
TIP127 PNP Power Darlington Transistor 100V 5A TO-220 Package
Specifications:-
| Transistor Polarity | PNP |
| Collector?Emitter Voltage (VCEO) | 100V |
| Collector?Base Voltage (VCBO) | 100V |
| Continuous Collector Current (Ic) | 5A |
| Continuous Base Current (Ib) | 0.12A |
| Emitter Base Voltage (VEBO) | 5V |
| Power Dissipation (Pd) | 65W |
| Operating Temperature Range | -65 - 150?C |
| DC Current Gain (hFE) | 1000 |