Category: MOSFET / IGBT
MOSFET / IGBT
Showing all 13 results
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20N60 MOSFET
Original price was: ₹120.00.₹58.50Current price is: ₹58.50. + GSTAdd to cart20N60 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
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24N60M2 N-Channel Enhancement MOSFET
Original price was: ₹200.00.₹119.60Current price is: ₹119.60. + GSTAdd to cartFeatures
- Its low gate charge is typically 110nC
- Its operating voltage is 600V
- Â Its operating current is 23.5A
- Its used for fast switching applications
- Improved DV/DT capability
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25N120ANTD IGBT – 1200V 25A NPT Trench IGBT
Original price was: ₹92.00.₹72.98Current price is: ₹72.98. + GSTAdd to cartFeatures of 25N120 IGBT
- NPT Trench Technology, Positive Temperature Coefficient
- Extremely Enhanced Avalanche Capability
- fast reverse recovery
- low operating forward voltage
- low leakage current
Application of 25N120 IGBT
- AC drives
- DC drives and choppers
- Uninteruptible power supplies (UPS)
- switched-mode and resonant-mode power supplies
- Inductive Heaters, Inductive cookers
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2N60 – 2A,600V -N-Channel Power Mosfet Low Gate Charge
Original price was: ₹50.00.₹36.90Current price is: ₹36.90. + GSTAdd to cartFEATURES
- RDS(ON) = 3.8? at VGS = 10V.
- Ultra Low gate charge (typical 9.0nC)
- Low reverse transfer capacitance (Crss = typical 5.0 pF)
- Fast switching capability
- Avalanche energy specified
- Improved dv/dt capability, high ruggedness
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2SC5200 and 2SA1943 MOSFET (Pair of 1)
Original price was: ₹100.00.₹78.00Current price is: ₹78.00. + GSTRead more 2SA1943 energy transistor (PNP) of Toshiba logo 2SC5200 energy transistor (NPN) Toshiba logo 2SA1943 energy transistor and 2SA5200 energy transistor utilized in 100W – 3000watts prime constancy audio amplifier.
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48N60M2 mosfet
Original price was: ₹250.00.₹195.00Current price is: ₹195.00. + GSTAdd to cartThis device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.
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4N60 -4A 600V- FQPF4N60 4N60 N-Channel MOSFET 600V TO-220F NEW
Original price was: ₹50.00.₹36.90Current price is: ₹36.90. + GSTAdd to cartFeatures
? Low gate charge ( typical 16nC)
? Fast switching
? 100% avalanche tested
? Improved dv/dt capability -
55n60nd mosfet
Original price was: ₹290.00.₹266.50Current price is: ₹266.50. + GSTAdd to cartThis FDmeshâ„¢ II Power MOSFET with intrinsic fast-recovery body diode is produced using the second generation of MDmeshâ„¢ technology. Utilizing a new strip-layout vertical structure, this revolutionary device features extremely low onresistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift converters.
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80R280 MOSFET
Original price was: ₹150.00.₹91.00Current price is: ₹91.00. + GSTAdd to cartBy using high-quality components, such as automotive power MOSFETs from Infineon, engineers and automakers keep MOSFET-related failures to an absolute minimum. Our commitment to our customers’ success and to overall road safety is proven by the fact that all automotive MOSFETs bearing our name uphold the highest-possible quality standards, far beyond AEC-Q101.
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IGBT BT25T120, Original, N-Chanel IGBT 25A,1200V transistor
Original price was: ₹80.00.₹72.98Current price is: ₹72.98. + GSTAdd to cartElectronics IGBT BT25T120 , Original, N-Chanel IGBT 25A,1200V transistor Extremely Enhanced Avalanche Capability
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IRFZ44N MOSFET – 55V 49A N-Channel Power MOSFET TO-220 Package
Original price was: ₹30.00.₹20.12Current price is: ₹20.12. + GSTAdd to cartThe IRFZ44N is known for its high drain current and fast switching speed. Adding to that it also has a low Rds value which will help in increasing the efficiency of switching circuits. The MOSFET will start turning on with a small gate voltage of 4V, but the drain current will be maximum only when a gate voltage of 10V is applied. If the mosfet has to be driven directly from a microcontroller like Arduino then try the logic level version IRLZ44N mosfet.
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P55NF06 ? 60V , 50A N-Channel Power MOSFET
Original price was: ₹30.00.₹18.04Current price is: ₹18.04. + GSTAdd to cartP55NF06 power MOSFETs have been developed using STMicroelectronics? unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DCDC converters for telecom and computer applications, and applications with low gate charge driving requirements.
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TP4056 1A Li-ion lithium Battery Charging Module With Current Protection – Type C
Original price was: ₹59.00.₹35.22Current price is: ₹35.22. + GSTAdd to cartSpecifications:
Charging accuracy (%) 1.5 Charging method Linear Full Charge Voltage (V) 4.2 Over-Current Protection (A) 3 Under-Voltage Protection (V) 2.5 Input Voltage (V) 4.5-5.5 Rated Power (W) 4.2 Operating Temperature (?C) -10 to 85 Length (mm) 25 Weight (gm) 20 Height (mm) 6
Products
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MPF102 TO-92 RF Amplifier 10mA Transistor
Original price was: ₹30.00.₹20.00Current price is: ₹20.00. + GST
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6A Rotary Switch for 3 Phase Reversal and Forward Control, G Controls
Original price was: ₹400.00.₹370.00Current price is: ₹370.00. + GST
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TEMPERATURE INDICATOR DISPLAY PANEL LED AC 50-380V Green
Original price was: ₹500.00.₹400.00Current price is: ₹400.00. + GST
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0.47μF 474J 630V CBB22 Metallized Polypropylene Film Capacitor
Original price was: ₹20.00.₹15.00Current price is: ₹15.00. + GST
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Heatsink Compound 50 gms
Original price was: ₹150.00.₹117.00Current price is: ₹117.00. + GST