Mosfet IRFB4110 Dip Transistor
Original price was: ₹82.00.₹71.50Current price is: ₹71.50. + GST
- High Current Capacity: Supports up to 180A of continuous current, perfect for demanding applications.
- Low RDS(on): Minimizes power loss with a low on-resistance, improving efficiency.
- Fast Switching: Optimized for fast switching speeds in high-power circuits.
- TO-220 Package: Convenient DIP design for easy integration into circuit boards.
Perfect for use in various electronics projects in India, Mosfet IRFB4110 Dip Transistor ensures reliability and performance. Ideal for various electronics projects, Mosfet IRFB4110 Dip Transistor offers quality and performance.
22 in stock
The IRFB4110 is a high-performance N-channel MOSFET designed for power management applications. Its advanced design provides superior efficiency, making it ideal for high-current and high-power switching circuits.
Key Features:
- High Current Capacity: Supports up to 180A of continuous current, perfect for demanding applications.
- Low RDS(on): Minimizes power loss with a low on-resistance, improving efficiency.
- Fast Switching: Optimized for fast switching speeds in high-power circuits.
- TO-220 Package: Convenient DIP design for easy integration into circuit boards.
Applications:
- Power management systems
- Motor control
- DC-DC converters
- Electric vehicles and solar inverters
Key Applications: Used widely in electronic circuits, automation, robotics, and educational projects. Optimized for reliable performance in India-specific environments and conditions.
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Applications: Suitable for electronics projects, automation, and educational purposes. Widely used in Indian and international markets.
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Specifications:
| Charging accuracy (%) | 1.5 |
| Charging method | Linear |
| Full Charge Voltage (V) | 4.2 |
| Over-Current Protection (A) | 3 |
| Under-Voltage Protection (V) | 2.5 |
| Input Voltage (V) | 4.5-5.5 |
| Rated Power (W) | 4.2 |
| Operating Temperature (C) | -10 to 85 |
| Length (mm) | 25 |
| Weight (gm) | 20 |
| Height (mm) | 6 |
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Specification
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- IC Collector current -3 A
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- ICM Collector peak current (tP < 5ms) -5 A
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- IB Base current -1 A
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- VCBO Collector - base voltage (IE = 0) -100 V
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- VCEO Collector - emitter voltage (IB = 0) -100 V
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- VEBO Emitter - base voltage (IC = 0) -5 V
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- PTOT Total dissipation at Tcase = 25?C 40W? Tamb = 25?C 2W
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- Tstg Storage temperature -65 to 150 ?C
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- TJ Max. operating junction temperature 150 ?C
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I got my project done with these components Great Support
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Online best cost electronic components
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Very fast delivery.
Shubham (verified owner) –
Good support and recommended
Devendra (verified owner) –
Drone parts i ordered and found ok
Harsh (verified owner) –
Good Stem kit