Transistors

Specification

Type of transistor - N-MOSFET Drain-source voltage- 600V Drain current-? 2.5A Power dissipation-? 25W Gate-source voltage-? ?30V On-state resistance- 2?

MJE3055T is a three layer NPN or PNP device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE. Features:- ? High DC current gain ? Low collector?emitter saturation voltage ? High current?gain ? bandwidth product ? Annular construction for low leakage ? These devices are Pb?Free and are RoHS compliant

Manufacturer Product Number 😕 D45H11 Description : TRANS PNP 80V 10A TO220 Detailed Description : Bipolar (BJT) Transistor PNP 80V

SCR Thyristors are Current Operated Devices, a Small Gate Current Controls a Larger Anode Current. • Thyristors are High Speed Switches that Can be Used to Replace Electromechanical Relays in Many Circuits. • Thyristor is a Four Layer (P-N-P-N) Semiconductor Device that Contains Three PN Junctions in Series. • Easy Installation By Its Miniature Size and Thin Electrode Leads, Low Cost. Perfect for use in various electronics projects in India, 40TPS12 Thyristor Transistor ensures reliability and performance. Ideal for various electronics projects, 40TPS12 Thyristor Transistor offers quality and performance.