CTC 1351 IC NPN Transistor
ULN2003 -DIP-16 16pin Darlington Transistor Array 50V IC Darlingtons TEXAS
Features of ULN2003 IC
- Seven Darlingtons per package
- Output current 500 mA per driver (600 mA peak)Output voltage 50 V
- Integrated suppression diodes for inductive loads
- Outputs can be paralleled for higher current
- TTL/CMOS/PMOS/DTL compatible inputs
- Input pins placed opposite to output pins to simplify layout
2N6517 Bipolar PNP Transistor
Specification
- Type:NPN
- Collector-Emitter Voltage:350V
- Collector-Base Voltage:350V
- Emitter-Base Voltage:6V
- Collector Current:0.5A
- Collector Dissipation:0.625W
- DC Current Gain (hfe):20to200
- Transition Frequency:40MHz
- Operating and Storage Junction Temperature Range:-55 to +150C
- Package:TO-92
MJE13005A NPN Power Transistor
2N3055 NPN Power Transistor TO-3 Metal Package
Mosfet 10n65 , DIP
C2570A Silicon NPN Transistor – Low Noise Amplifier for VHF & UHF Stages
MUR1660 600V 16A Ultrafast Power Diode
The MUR1660CT 16A, 600V Ultra fast Diodes have a low forward voltage drop and are of planar, silicon nitride passivated, ion-implanted, epitaxial construction. These devices are intended for use as energy steering/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and ultra fast recovery with soft recovery characteristics minimizes ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistor. These state-of-the-art devices are a series designed for use in switching power supplies, inverters and as free wheeling diodes. The MUR1660CT is designed for use in switching power supplies, inverters and as free wheeling diodes, these state?of?the?art devices have the following features:
? Ultra fast 35 and 60 Nanosecond Recovery Times
? 175?C Operating Junction Temperature
? Popular TO?220 Package
? Epoxy Meets UL94, VO @ 1/8?
? High Temperature Glass Passivated Junction
? High Voltage Capability to 600 Volts
? Low Leakage Specified @ 150?C Case Temperature
? Current Derating @ Both Case and Ambient Temperatures
??Low power loss
??High efficiency Low forward voltage
??Super fast recovery times
Mechanical Characteristics:-
? Case: Epoxy, Molded
? Weight: 1.9 grams (approximately)
? Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
? Lead Temperature for Soldering Purposes: 260?C Max. for 10 Seconds
? Shipped 50 units per plastic tube
? Marking: U1610, U1615, U1620, U1640, U1660
Mosfet IRFB4110 Dip Transistor
- High Current Capacity: Supports up to 180A of continuous current, perfect for demanding applications.
- Low RDS(on): Minimizes power loss with a low on-resistance, improving efficiency.
- Fast Switching: Optimized for fast switching speeds in high-power circuits.
- TO-220 Package: Convenient DIP design for easy integration into circuit boards.
