Category: MOSFET / IGBT
MOSFET / IGBT
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20N60 MOSFET
₹41.00Add to cart20N60 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
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Features of 25N120 IGBT
- NPT Trench Technology, Positive Temperature Coefficient
- Extremely Enhanced Avalanche Capability
- fast reverse recovery
- low operating forward voltage
- low leakage current
Application of 25N120 IGBT
- AC drives
- DC drives and choppers
- Uninteruptible power supplies (UPS)
- switched-mode and resonant-mode power supplies
- Inductive Heaters, Inductive cookers
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FEATURES
- RDS(ON) = 3.8Ω at VGS = 10V.
- Ultra Low gate charge (typical 9.0nC)
- Low reverse transfer capacitance (Crss = typical 5.0 pF)
- Fast switching capability
- Avalanche energy specified
- Improved dv/dt capability, high ruggedness
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Features
• Low gate charge ( typical 16nC)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability - Add to cart
The IRFZ44N is known for its high drain current and fast switching speed. Adding to that it also has a low Rds value which will help in increasing the efficiency of switching circuits. The MOSFET will start turning on with a small gate voltage of 4V, but the drain current will be maximum only when a gate voltage of 10V is applied. If the mosfet has to be driven directly from a microcontroller like Arduino then try the logic level version IRLZ44N mosfet.
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P55NF06 power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DCDC converters for telecom and computer applications, and applications with low gate charge driving requirements.
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Specifications:
Charging accuracy (%) 1.5 Charging method Linear Full Charge Voltage (V) 4.2 Over-Current Protection (A) 3 Under-Voltage Protection (V) 2.5 Input Voltage (V) 4.5-5.5 Rated Power (W) 4.2 Operating Temperature (°C) -10 to 85 Length (mm) 25 Weight (gm) 20 Height (mm) 6
