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Category: MOSFET / IGBT

MOSFET / IGBT

Showing all 8 results

  • 20N60 MOSFET

    58.50 + GST

    20N60 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.

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  • 24N60M2 N-Channel Enhancement MOSFET

    119.60 + GST

    Features

    • Its low gate charge is typically 110nC
    • Its operating voltage is 600V
    •  Its operating current is 23.5A
    • Its used for fast switching applications
    • Improved DV/DT capability
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  • Features of 25N120 IGBT

    • NPT Trench Technology, Positive Temperature Coefficient
    • Extremely Enhanced Avalanche Capability
    • fast reverse recovery
    • low operating forward voltage
    • low leakage current

    Application of 25N120 IGBT

    • AC drives
    • DC drives and choppers
    • Uninteruptible power supplies (UPS)
    • switched-mode and resonant-mode power supplies
    • Inductive Heaters, Inductive cookers
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  • 2N60 – 2A,600V -N-Channel Power Mosfet Low Gate Charge

    36.90 + GST

    FEATURES

    • RDS(ON) = 3.8? at VGS = 10V.
    • Ultra Low gate charge (typical 9.0nC)
    • Low reverse transfer capacitance (Crss = typical 5.0 pF)
    • Fast switching capability
    • Avalanche energy specified
    • Improved dv/dt capability, high ruggedness
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  • 4N60 -4A 600V- FQPF4N60 4N60 N-Channel MOSFET 600V TO-220F NEW

    36.90 + GST

    Features

    ? Low gate charge ( typical 16nC)
    ? Fast switching
    ? 100% avalanche tested
    ? Improved dv/dt capability

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  • IRFZ44N MOSFET – 55V 49A N-Channel Power MOSFET TO-220 Package

    20.12 + GST

    The IRFZ44N is known for its high drain current and fast switching speed. Adding to that it also has a low Rds value which will help in increasing the efficiency of switching circuits. The MOSFET will start turning on with a small gate voltage of 4V, but the drain current will be maximum only when a gate voltage of 10V is applied. If the mosfet has to be driven directly from a microcontroller like Arduino then try the logic level version IRLZ44N mosfet.

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  • P55NF06 ? 60V , 50A N-Channel Power MOSFET

    18.04 + GST

    P55NF06 power MOSFETs have been developed using STMicroelectronics? unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DCDC converters for telecom and computer applications, and applications with low gate charge driving requirements.

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  • Specifications:

    Charging accuracy (%)1.5
    Charging methodLinear
    Full Charge Voltage (V)4.2
    Over-Current Protection (A)3
    Under-Voltage Protection (V)2.5
    Input Voltage (V)4.5-5.5
    Rated Power (W)4.2
    Operating Temperature (?C)-10 to 85
    Length (mm)25
    Weight (gm)20
    Height (mm)6
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