C2570A Silicon NPN Transistor – Low Noise Amplifier for VHF & UHF Stages
Original price was: ₹10.00.₹9.01Current price is: ₹9.01. + GST
The 2SC2570 Silicon NPN Transistor is optimized for low noise amplification in VHF & UHF stages. High reliability with a 600mW power dissipation and wide temperature range
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The 2SC2570 Silicon NPN Transistor is specially designed for low noise amplifier (LNA) applications in VHF and UHF stages, making it ideal for communication systems, broadcasting equipment, and RF circuits. With a collector to base voltage of 25V and collector to emitter voltage of 12V, the 2SC2570 offers robust performance and reliability in high-frequency operations. The transistor supports a collector current of up to 70mA and a total dissipation of 600mW, ensuring consistent operation even under heavy load. With a junction temperature rating of 150°C and a storage temperature range of -65°C to +150°C, it’s built for longevity and stability in demanding environments. Whether you’re designing radio receivers, signal amplifiers, or other RF equipment, the 2SC2570 provides the ideal balance of performance, efficiency, and durability.
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Specification
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- IC Collector current -3 A
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- ICM Collector peak current (tP < 5ms) -5 A
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- IB Base current -1 A
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- VCBO Collector - base voltage (IE = 0) -100 V
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- VCEO Collector - emitter voltage (IB = 0) -100 V
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- VEBO Emitter - base voltage (IC = 0) -5 V
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- PTOT Total dissipation at Tcase = 25?C 40W? Tamb = 25?C 2W
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- Tstg Storage temperature -65 to 150 ?C
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- TJ Max. operating junction temperature 150 ?C
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