20N60C3 – HCH725 MOSFET
20N60 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
24N60M2 N-Channel Enhancement MOSFET
48N60M2 mosfet
IRFZ44N MOSFET – 55V 49A N-Channel Power MOSFET TO-220 Package
The IRFZ44N is known for its high drain current and fast switching speed. Adding to that it also has a low Rds value which will help in increasing the efficiency of switching circuits. The MOSFET will start turning on with a small gate voltage of 4V, but the drain current will be maximum only when a gate voltage of 10V is applied. If the mosfet has to be driven directly from a microcontroller like Arduino then try the logic level version IRLZ44N mosfet.
TP4056 1A Li-ion lithium Battery Charging Module With Current Protection – Type C
Specifications:
| Charging accuracy (%) | 1.5 |
| Charging method | Linear |
| Full Charge Voltage (V) | 4.2 |
| Over-Current Protection (A) | 3 |
| Under-Voltage Protection (V) | 2.5 |
| Input Voltage (V) | 4.5-5.5 |
| Rated Power (W) | 4.2 |
| Operating Temperature (C) | -10 to 85 |
| Length (mm) | 25 |
| Weight (gm) | 20 |
| Height (mm) | 6 |
4N60 -4A 600V- FQPF4N60 4N60 N-Channel MOSFET 600V TO-220F NEW
Features
Low gate charge ( typical 16nC) Fast switching 100% avalanche tested Improved dv/dt capability Perfect for use in various electronics projects in India, 4N60 -4A 600V- FQPF4N60 4N60 N-Channel MOSFET 600V TO-220F NEW ensures reliability and performance. Ideal for various electronics projects, 4N60 -4A 600V- FQPF4N60 4N60 N-Channel MOSFET 600V TO-220F NEW offers quality and performance.
80R280 MOSFET
2N60 – 2A,600V -N-Channel Power Mosfet Low Gate Charge
FEATURES
- RDS(ON) = 3.8 at VGS = 10V.
- Ultra Low gate charge (typical 9.0nC)
- Low reverse transfer capacitance (Crss = typical 5.0 pF)
- Fast switching capability
- Avalanche energy specified
- Improved dv/dt capability, high ruggedness
