
The Problem: Understanding Reverse Recovery in MOSFETs
When switching MOSFETs, especially in high-frequency circuits like SMPS or inverters, reverse recovery of the body diode can lead to voltage spikes, heat, and EMI. This happens when the diode doesn’t turn off instantly, causing current to flow briefly in the wrong direction.
The Solution: Tune or Avoid Reverse Recovery
You can minimize reverse recovery losses by:
Choosing MOSFETs with fast body diodes
Adding external Schottky diodes in parallel to handle reverse current
Optimizing gate drive timing to reduce overlap in conduction
Practical Example: Half-Bridge Inverter for LED Driver
Let’s say you’re designing a half-bridge LED driver. During switching, the body diode of the low-side MOSFET can cause a reverse recovery spike when the high-side MOSFET turns on. Placing a Schottky diode in parallel helps by clamping the spike and speeding up recovery.
Sample Calculation: Power Loss Due to Recovery
Assume:
Reverse recovery charge (Qrr) = 50nC
Switching frequency = 100kHz
Vbus = 12V
Loss = Qrr × Vbus × f = 50nC × 12V × 100kHz = 60mW
This adds up quickly with multiple switches!
Product Suggestion: Use Made in India Components
Try MOSFETs or Schottky diodes for efficient reverse recovery tuning.
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Written by smartxbrains
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