

Mosfet IRFB4110 Dip Transistor
₹82.00 Original price was: ₹82.00.₹71.50Current price is: ₹71.50. + GST
- High Current Capacity: Supports up to 180A of continuous current, perfect for demanding applications.
- Low RDS(on): Minimizes power loss with a low on-resistance, improving efficiency.
- Fast Switching: Optimized for fast switching speeds in high-power circuits.
- TO-220 Package: Convenient DIP design for easy integration into circuit boards.
Perfect for use in various electronics projects in India, Mosfet IRFB4110 Dip Transistor ensures reliability and performance. Ideal for various electronics projects, Mosfet IRFB4110 Dip Transistor offers quality and performance.
22 in stock
The IRFB4110 is a high-performance N-channel MOSFET designed for power management applications. Its advanced design provides superior efficiency, making it ideal for high-current and high-power switching circuits.
Key Features:
- High Current Capacity: Supports up to 180A of continuous current, perfect for demanding applications.
- Low RDS(on): Minimizes power loss with a low on-resistance, improving efficiency.
- Fast Switching: Optimized for fast switching speeds in high-power circuits.
- TO-220 Package: Convenient DIP design for easy integration into circuit boards.
Applications:
- Power management systems
- Motor control
- DC-DC converters
- Electric vehicles and solar inverters
Key Applications: Used widely in electronic circuits, automation, robotics, and educational projects. Optimized for reliable performance in India-specific environments and conditions.
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Applications: Suitable for electronics projects, automation, and educational purposes. Widely used in Indian and international markets.
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7 reviews for Mosfet IRFB4110 Dip Transistor
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Specifications:
Charging accuracy (%) | 1.5 |
Charging method | Linear |
Full Charge Voltage (V) | 4.2 |
Over-Current Protection (A) | 3 |
Under-Voltage Protection (V) | 2.5 |
Input Voltage (V) | 4.5-5.5 |
Rated Power (W) | 4.2 |
Operating Temperature (C) | -10 to 85 |
Length (mm) | 25 |
Weight (gm) | 20 |
Height (mm) | 6 |
4N60 -4A 600V- FQPF4N60 4N60 N-Channel MOSFET 600V TO-220F NEW
Features
Low gate charge ( typical 16nC) Fast switching 100% avalanche tested Improved dv/dt capability Perfect for use in various electronics projects in India, 4N60 -4A 600V- FQPF4N60 4N60 N-Channel MOSFET 600V TO-220F NEW ensures reliability and performance. Ideal for various electronics projects, 4N60 -4A 600V- FQPF4N60 4N60 N-Channel MOSFET 600V TO-220F NEW offers quality and performance.TIP32C pnp transistor 100v 3a to-220 ic
Specification
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- IC Collector current -3 A
-
- ICM Collector peak current (tP < 5ms) -5 A
-
- IB Base current -1 A
-
- VCBO Collector - base voltage (IE = 0) -100 V
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- VCEO Collector - emitter voltage (IB = 0) -100 V
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- VEBO Emitter - base voltage (IC = 0) -5 V
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- PTOT Total dissipation at Tcase = 25?C 40W? Tamb = 25?C 2W
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- Tstg Storage temperature -65 to 150 ?C
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- TJ Max. operating junction temperature 150 ?C
Harsh (verified owner) –
I got my project done with these components Great Support
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Less cost than other websites
Devendra (verified owner) –
Online best cost electronic components
Sneha (verified owner) –
Very fast delivery.
Shubham (verified owner) –
Good support and recommended
Devendra (verified owner) –
Drone parts i ordered and found ok
Harsh (verified owner) –
Good Stem kit