MOSFET & IGBT

  • BT136-600D TRIAC Quick View
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    • BT136-600D TRIAC Quick View
    • BT136-600D TRIAC
    • 14.80
    • BT136 is Planar passivated very sensitive gate four quadrant TRIAC in a SOT78 plastic package intended for use in general purpose bidirectional switching and phase control applications, where high sensitivity is required in all four quadrants. This very sensitive gate "series D" triac is intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits.
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  • 4N60 MOSFET Quick View
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  • 2N60 MOSFET Quick View
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    • 2N60 MOSFET Quick View
    • 2N60 MOSFET
    • 45.00
    • FEATURES RDS(ON) = 3.8Ω at VGS = 10V. Ultra Low gate charge (typical 9.0nC) Low reverse transfer capacitance (Crss = typical 5.0 pF) Fast switching capability Avalanche energy specified Improved dv/dt capability, high ruggedness
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  • MBR20100 Switch Mode Power Rectifire Quick View
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    • MBR20100 Switch Mode Power Rectifire Quick View
    • MBR20100 Switch Mode Power Rectifire
    • 21.50
    • 20 A Total (10 A Per Diode Leg) Guard−Ring for Stress Protection Low Forward Voltage 175°C Operating Junction Temperature Epoxy Meets UL 94 V−0 @ 0.125 in Low Power Loss/High Efficiency High Surge Capacity Low Stored Charge Majority Carrier Conduction Shipped 50 units per plastic tube These Devices are Pb−Free and are RoHS Compliant
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  • P55NF06 Power Mosfet Quick View
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    • P55NF06 Power Mosfet Quick View
    • P55NF06 Power Mosfet
    • 22.06
    • P55NF06 power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DCDC converters for telecom and computer applications, and applications with low gate charge driving requirements.
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