Transistor PNP 2SB 688


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  • Type Designator: 2SB688.
    Material of Transistor: Si.
    Polarity: PNP.
    Maximum Collector Power Dissipation (Pc): 80 W.
    Maximum Collector-Base Voltage |Vcb|: 120 V.
    Maximum Collector-Emitter Voltage |Vce|: 120 V.
    Maximum Emitter-Base Voltage |Veb|: 5 V.
    Maximum Collector Current |Ic max|: 8 A.
    Max. Operating Junction Temperature (Tj): 150 °C.
    Transition Frequency (ft): 5 MHz.
    Collector Capacitance (Cc): 280 pF.
    Forward Current Transfer Ratio (hFE), MIN: 55.


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