Transistor PNP 2SB 688

50.62

10 in stock

Add to Wishlist
Add to Wishlist

Description

Specification

  • Type Designator: 2SB688.
    Material of Transistor: Si.
    Polarity: PNP.
    Maximum Collector Power Dissipation (Pc): 80 W.
    Maximum Collector-Base Voltage |Vcb|: 120 V.
    Maximum Collector-Emitter Voltage |Vce|: 120 V.
    Maximum Emitter-Base Voltage |Veb|: 5 V.
    Maximum Collector Current |Ic max|: 8 A.
    Max. Operating Junction Temperature (Tj): 150 °C.
    Transition Frequency (ft): 5 MHz.
    Collector Capacitance (Cc): 280 pF.
    Forward Current Transfer Ratio (hFE), MIN: 55.

Reviews

There are no reviews yet.

Be the first to review “Transistor PNP 2SB 688”

Your email address will not be published. Required fields are marked *