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MJE3055T NPN Power Transistor 60V 10A TO-220 Package

24.54

MJE3055T is a three layer NPN or PNP device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE.

Features:-

• High DC current gain

• Low collector−emitter saturation voltage

• High current−gain − bandwidth product

• Annular construction for low leakage

• These devices are Pb−Free and are RoHS compliant

50 in stock

Specification

Transistor PolarityNPN
Collector−Emitter Voltage (VCEO)60VDC
Collector−Base Voltage (VCBO)70VDC
Emitter−Base Voltage (VEBO)5VDC
Continuous Collector Current (Ic)10ADC
Continuous Base Current (Ib)6ADC
Power Dissipation (Pd)75W
Operating Temperature Range-55 – 150°C
DC Current Gain (hFE)20-70

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