KF4N60 N CHANNEL MOS FIELD EFFECT TRANSISTOR
This planar stripe M OSFET has better characteristics, such as fast switching time, low on resistan ce, low gate charge and excellent avalanche characteristics.
It is mainly suit able for electronic ballast and switchi ng mode power supplies.
48 in stock
VDSS= 600V, ID= 4A Drain-Source ON Resistance : RDS(ON)=2.
5 Qg(typ) = 10nC @VGS = 10V MAXIMUM RATING (Ta=25 )
CHARACTER ISTIC SYMBOL Drain-Source Voltage Gat e-Source Voltage VDSS VGSS @TC=25 Dra in Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche