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CNY17-2 Phototransistor Optocoupler IC DIP-6 Package

9.84 + GST

Specification:-

ParameterValue
Package / CaseDIP-6
Length8.7 mm
Width6.5 mm
Height3.81 mm
Collector-Emitter Breakdown Voltage70 V
Current Transfer Ratio320%
Fall Time15 us
Isolation Voltage5000 Vrms
Maximum Collector Current100 mA
Maximum Collector Emitter Saturation Voltage0.4 V
Maximum Collector Emitter Voltage70 V
Maximum Operating Temperature+ 100 C
Minimum Operating Temperature– 55 C
Mounting StyleThrough Hole
Number of Channels1 Channel
Output TypeNPN Phototransistor
PackagingTube
Pd – Power Dissipation150 mW
Product TypeTransistor Output Optocouplers
Rise Time4.6 us
SeriesCNY

25 in stock

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The CNY17-4 is an optically coupled pair consisting of a gallium arsenide infrared emitting diode optically coupled to a silicon NPN phototransitor. Signal information, including a DC level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output. The CNY17 can be used to replace relays and transformers in many digital interface applications, as well as analog applications such as CRT modulation.

Features:-

??Isolation test voltage: 5000 VRMS

??Long term stability

??Industry standard dual-in-line package

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