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BD135 NPN Transistor

6.60

Feature

  • VCBO  Collector-Base Voltage : BD135 45V
  • VCEO  Collector-Emitter Voltage : BD135 45V
  • VEBO  Emitter-Base Voltage 5 V
  • IC  Collector Current (DC) 1.5 A
  • ICP  Collector Current (Pulse) 3.0 A
  • IB  Base Current 0.5 A
  • PC  Collector Dissipation (TC=25°C) 12.5 W
  • PC  Collector Dissipation (Ta=25°C) 1.25 W
  • T Junction Temperature 150 °C
  • TSTG  Storage Temperature – 55 ~ 150 °C
  • VCE(sat) Collector-Emitter Saturation Voltage IC = 500mA, IB = 50mA  0.5 V
  • VBE(on) Base-Emitter ON Voltage VCE = 2V, I= 0.5A  1 V

96 in stock

  • BD135 Transistor is use in Medium Power Linear and Switching Applications. BD135 Transistor is Complement to BD136, BD138 and BD140 respectively.

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