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2N6517 Bipolar Transistor

15.34

Specification

  • Type: NPN
  • Collector-Emitter Voltage: 350 V
  • Collector-Base Voltage: 350 V
  • Emitter-Base Voltage: 6 V
  • Collector Current: 0.5 A
  • Collector Dissipation0.625W
  • DC Current Gain (hfe): 20 to 200
  • Transition Frequency: 40 MHz
  • Operating and Storage Junction Temperature Range: 55 to +150 °C
  • Package: TO-92

50 in stock

The High Voltage PNP Bipolar Transistor is designed for general purpose switching applications. The device is housed in the TO-92 package, which is designed for medium power applications.

 

Features

  • Voltage and Current are Negative for PNP Transistors
  • Pb-Free Package is Available*

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