2N60 MOSFET

45.00

FEATURES

  • RDS(ON) = 3.8Ω at VGS = 10V.
  • Ultra Low gate charge (typical 9.0nC)
  • Low reverse transfer capacitance (Crss = typical 5.0 pF)
  • Fast switching capability
  • Avalanche energy specified
  • Improved dv/dt capability, high ruggedness

99 in stock

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Description

  • The 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.

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